Abstract
The high-speed and high-power germanium photodetector (Ge PD) is highly desired for integrated microwave photonics systems. However, the space-charge effect has impeded the improvement of the performance. Here, we propose and demonstrate a high-speed and high-power Ge PD with alleviated space-charge effect, namely carrier-accelerated PD (CA PD). An additional electrical field is introduced to equalize the spatial distribution of photo-generated carriers, and thus the space-charge effect can be alleviated compared with conventional schemes. The CA PD is fabricated in the standard silicon photonics platform and has a small-signal bandwidth of 25 GHz. The carrier dynamics influenced by the additional electrical field is investigated using the impulse photocurrent measurement. In high-power condition, a 1-dB compression current of 1.7 mA can be observed.
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