Abstract
Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphous-semiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphous-semiconductor contact permits its use on both sides of a detector, replacing conventional B ion implanted and Li diffused contacts. A 5/spl times/5 orthogonal strip detector has been produced using this technique. Experimental results from this detector are presented.
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