Abstract
Morphological information has been obtained using the strong near-infrared photoluminescence emitted by germanium (Ge) nanocrystals (NCs) coherently imbedded in SiGe alloy layers, grown by molecular beam epitaxy on Si substrates. The emission spectra are analyzed for the effects of strain, carrier confinement, and disorder over a wide range of Ge concentrations in the surrounding SiGe medium. This analysis provided significant insight into the properties of the Ge nanocrystals, including their size and shape. We also discuss the mechanisms leading to the high quantum efficiency observed for emission from the Ge nanocrystals at low temperatures. We indicate how direct gap behavior might be achieved for Ge NCs lattice matched within dilute Ge1-ySny alloys, where tensile strain would be present in the NCs in all three directions.
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