Germanium Doping, Contacts, and Thin-Body Structures

Abstract

Interest in Ge has risen sharply in since the turn of the century, as it has enabled applications ranging from field-effect-transistors, solar cells, photonics, and sensors. In this paper the state-of-the-art will be reviewed in the areas of (i) dopant behavior and ultrashallow junction performance metrics, (ii) thin-body structure formation, and (iii) contact methodologies in Ge.