Abstract
Germanium exhibits high sensitivity to short-wave infrared (SWIR) and X-ray radiation, making it an interesting candidate for imaging applications in these bands. Recent advances in germanium processing allow for high-quality charge-coupled devices (CCDs) to be realized in this material. In this article, we discuss our evaluation of germanium as an absorber material for CCDs via fabrication and analysis of discrete devices such as diodes, metal-insulator-semiconductor capacitors, and buried-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We then describe fabrication of our first imaging device on germanium, a 32 × 1 × 8.1 μm linear shift register. Based on this work, we find that germanium is a promising material for CCDs imaging in the SWIR and X-ray bands.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
