Abstract
We show that Ag/Ge/Ag ‘fishnet’-like metal-semiconductor metamaterials can be designed to exhibit negative index material (NIM) behavior around 1.5 µm in spite of interband absorption in Ge becoming substantial in this region. We use the FDTD method with the Adachi model for an accurate account of the dielectric response in Ge. The system is expected to perform faster than Si-based fishnet, which is corroborated by preliminary data.
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