Germanium and Silicon: A Comparative Study of Hydrogenated Interstitial and Vacancy Defects by IR Spectroscopy

Abstract

Vibration modes of cryogenically H-implanted germanium in the specific case of cryogenic implantation were detected by Fourier transform IR spectroscopy. Multiple internal reflection apparatuses were used; this optical configuration allowed enough sensitivity to detect small absorption bands. By making an analogy with the "well-known" silicon modes, hydrogenated interstitial and multivacancy defects and hydrogen-terminated were identified. The peaks at ( after annealing) and ( after annealing) can be attributed to modes in germanium, those at ( after annealing) and ( after annealing) to , those at ( after annealing) to , and those at to .