Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes

Abstract

Ballistic transport in monolayer Germanane MOSFETs is investigated for high-performance (HP) applications. Characteristics of both n- and p-type transistors having channel lengths of 7, 5, and 3 nm are studied and compared against the International Technology Roadmap for Semiconductor (ITRS) target of 2028. Our simulation approach is based on a self-consistent quantum ballistic transport model within the framework of the nonequilibrium Green’s function formalism and relies on a single-band and a two-band ${k}\cdot {p}$ Hamiltonian for n- and p-type channels, respectively. We found that, even for a gate length scaled down to 3 nm, the ON current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) in n- and p-MOSFETs for a fixed OFF current ${I}_{ \mathrm{\scriptscriptstyle OFF}} =100\,\,{\text nA/\mu m}$ is as high as ~890 and 700 $\mu \text {A}/\mu \text {m}$ , respectively. For longer channel lengths, the p-MOSFET can outperform the n-MOSFET in terms of ${I}_{ \mathrm{\scriptscriptstyle ON}}$ requirements, as the direct source-to-drain tunneling gets suppressed. Other performance metrics, including gate capacitance, intrinsic switching delay, and switching energy, have also been calculated and found to be comparable to the ITRS 2028 HP technology requirements.