Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures

Abstract

The geometry-dependent Auger recombination (AR) rate of semiconductor nanostructures has been investigated based on atomic-bond-relaxation correlation mechanism. We found that the increase in dimension is of great benefit to suppress the AR process due to reduction of the Coulomb interaction between electron and hole. The AR lifetime increases as the size decreases with a Eg7/2D7 dependence. Moreover, the AR rate of nanostructures can be achieved though modulating the related geometry parameters. Our results are consistent with the available evidence, implying that the proposed model could be expected to be a general approach to deal with AR process in semiconductor nanostructures.