Abstract
In this letter, flexible voltage-controlled capacitors (varactors) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor are presented. Two different varactor designs and their influence on the capacitance tuning characteristics are investigated. The first design consists of a top electrode finger structure which yields a maximum capacitance tunability of 6.9 at 10 kHz. Second, a novel interdigitated varactor structure results in a maximum tunability of 93.7 at 100 kHz. The design- and frequency-dependencies of the devices are evaluated through C–V measurements. Furthermore, we show bending stability of the devices down to a tensile radius of 6 mm without altering the performance. Finally, a varactor is combined with a thin-film resistor to demonstrate a tunable RC -circuit for impedance matching and low-pass filtering applications. The device fabrication flow and material stack are compatible with standard flexible thin-film transistor fabrication which enables parallel implementation of analog or logic circuitry and varactor devices.
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