Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

Abstract

In this paper, we have fabricated and compared the performance of lateral enhancement-mode GaN MOSFETs with linear and circular geometries. Circular MOSFETs show 2 to 4 orders of magnitude lower leakage current than that of linear MOSFETs. We also studied short channel behaviors and found that they are similar to those previously reported Si MOSFET.