Abstract
A semi-analytical-model is proposed to predict the geometric component in charge pumping (CP) measurements for transistors. It is based on contributing of active CP-area and low-level voltage (V L ) of the gate signal, thermal diffusion, drift field, and self-induced drift field. The calculated I CP -V L characteristics with geometric component model are found in good correlation with the experimental I CP -V L data and are more accurate than the calculated CP without geometric component. This modeling approach can be extended for MOSFET stress reliability evaluation such as negative bias temperature instability (NBTI) and radiation degradations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
