Abstract
A critical review of recent studies of the geometrical and electronic structure of the Si(001) and Si(111) surfaces is given. Emphasis is placed on low-energy electron diffraction (LEED) studies of the geometrical structure, photoelectron spectroscopy studies of the electronic structure, and theoretical studies of the electronic and geometric structure of the Si(111)–(2×1), Si(111)–(7×7), Si(111)–(1×1)X, and Si(001)–(2×1) surfaces.
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