Abstract
The geometric and electronic structure of several iron silicide phases epitaxially grown on Si(111)7×7 have been characterized by means of surface sensitive techniques including scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy, ion scattering spectroscopy (ISS), and ultraviolet photoelectron spectroscopy. The silicides were grown by solid-phase and reactive-deposition epitaxy, and their stability range was determined in situ as a function of iron coverage and annealing temperature. In particular, we have studied the phases appearing in the low-coverage low-temperature region. Additionally, the crystallites of the most important FeSi2 phases (γ-FeSi2 and β-FeSi2) have been characterized at atomic level with STM, while the surface termination was analyzed with ISS.
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