Abstract
The minimization of the reflection of Si substrates is analyzed for the use of photovoltaic applications. Antireflection coatings consisted of both bulk and nanostructured thin film SiO2 and ITO over a broad spectral range of 400–1000 nm are optimized. The genetic algorithm and the transfer matrix method are applied and the thickness of layer varied, where refractive index and number of layer fixed for ITO, SiO2 layers. Optimization is performed by nanostructure with the order of low-n SiO2 and low-n ITO and the second order is low-n SiO2 and high-n ITO. The results are compared to their bulk forms and bare Silicon. Angle- and wavelength-averaged reflection coefficient for a periodic six-layer thin film anti-reflection coatings (ARCs) consisting low-n nanoporous SiO2 and high-n nanoporous ITO on silicon substrate reduced to 30% and is reported as the suitable structure of silicon solar cells.
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