Generation–recombination reduction in InAsSb photodiodes

Abstract

Generation–recombination processes in a narrow band gap active region of infrared photodiodes are studied theoretically and experimentally. Thanks to an analysis of the transport in InAsSb photodiodes as a function of temperature, we demonstrate that these processes can be reduced by controlling the doping of the active region. The first Auger-dominated detector in this spectral range is shown, with negligible diffusion and SRH generation–recombination processes. This leads to the highest detectivity ever reported for a high-temperature antimonide-based detector in this spectral range: D* = 2.5 × 1010 cm Hz1/2 W−1 at 250 K and 1.3 × 1011 cm Hz1/2 W−1 at 180 K and λ = 3.39 µm.