Abstract
A unified methodical approach to investigate the transport phenomena in semiconductors is formulated. Various recombination models used in studying the transport phenomena and the establishment of equilibrium in semiconductor structures are analyzed. New expressions describing the recombination processes under the steady-state conditions in arbitrary temperature fields are derived. The recombination process in the hot-carrier theory used when the temperatures of the charge carriers and phonons do not coincide was analyzed. Manifestations of the quasi-neutrality condition in thermodynamic equilibrium and transport phenomena are studied.
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