Generation-recombination-induced nonlinear characteristics of solid-state bipolar devices

Abstract

Generation-recombination processes have been studied with the use of a phenomenological approach. The approach is in principle based on the combined mechanisms involved in the dominant deep-level traps and in radiative and nonradiative processes in these devices. It is possible with the use of the approach to predict different types of carrier transition phenomena under zero- and nonzero-bias conditions. Carrier phase diagrams have been produced which can depict, in classified form, all possible transitions as a function of the coefficients involved in the phenomena. Attempts have also been made to deal with the generation-recombination processes associated with the midgap single-level impurities, in line with Shockley–Hall–Read theory. The approach leads to the development of a two-root model which demonstrates the existence or nonexistence of hysteresis in the I-V characteristics of devices. Detailed mathematical results and physical modeling have been presented. Graphical representation and experimental evidence of the model have also been produced.