Generation-recombination in disordered organic semiconductor: Application to the characterization of traps

Abstract

The presence of traps in organic semiconductor based electronic devices affects considerably their performances and their stability. The Shockley-Read-Hall (SRH) model is generally used to extract the trap parameters from the experimental results. In this paper, we propose to adapt the SRH formalism to disordered organic semiconductors by considering a hopping transport process and Gaussian distributions for both mobile and trapped carriers. The model is used to extract multiple trap parameters from charge based Deep Level Transient Spectroscopy (Q-DLTS) spectrum. Calculation of the charge transients are given in detail. The model predicts that the activation energy of the trap should not follow an Arrhenius plot on large temperature ranges. Also, the charge transients are no longer exponential when considering Gaussian trap distributions, enlarging the Q-DLTS peaks. The model fits the Q-DLTS spectra measured on organic diodes with a limited number of trap contributions with a good agreement. It is found that an increase of the material rate of disorder reduces the extracted trap energy distances to the LUMO but has no influence on the extracted trap distribution widths. This work shows the importance of considering the specific properties of organic materials to study their properties and their trap distributions. • A trap emission model has been developed for OSCs including hopping transport and Gaussian DOS for free carriers and traps. • Model predictions: the OSC disorder, i.e., to the width of the intrinsic Gaussian DOS, strongly influences the determined trap energies. • The emission model is validated by extracting trap parameters in organic diodes from Q-DLTS measurements.