Generation of THz radiation by photoconductive antennas on based thin films InGaAs and InGaAs/InAlAs.

A.A Leontyev,V.V Kornienko,G.B Galiev,K.A Kuznetsov,P.P Maltsev,S.S Pushkarev,G.Kh Kitaeva,A.N Klochkov,E.A Klimov,A.A Silaev

doi:10.1051/epjconf/201819502007

Abstract

Generation of THz radiation by photoconductive antennas on based thin films InGaAs and InGaAs/InAlAs.

Highlights

The low substrate temperatures result in a nonstoichiometric growth with the incorporation of excess arsenic in the crystal structure
A possible approach to increase the resistivity of low-temperature grown (LT)-InGaAs structures is to employ LTInGaAs/InAlAs superlattices [6,13,16,17]
LT-InAlAs layers have a higher dark resistivity as compared to LT-InGaAs and exhibit deep trap states that are situated energetically below the antisite defect levels of adjacent InGaAs layers that results in a reduction of residual carrier concentration

Summary

Introduction

The low substrate temperatures result in a nonstoichiometric growth with the incorporation of excess arsenic in the crystal structure. The most common non-stoichiometry-related point defects in LTarsenides are arsenic antisites with concentrations in the range 1017–1019 cm-3 depending on the substrate temperature and arsenic overpressure [7,8,9,10].

Results

Conclusion