Abstract
In this work, the intermodulation distortion (IMD) produced by RF MEMS capacitors is studied. It is demonstrated that due to their non-linear behaviour, parallel-plate MEMS capacitors generate 5/sub th/ order tones along with 3/sub rd/ order IMD products. It is shown that MEMS linear models, restricted to small displacements of the MEMS membrane, neglect 5/sub th/ order distortion while underestimate 3/sub rd/ order tones, when high voltages are considered. A numerical non-linear model for simulating intermodulation is presented and validated by means of measurements for the general 2-tone case. Generation of 3/sub rd/ and 5/sub th/ IMD products is also demonstrated in MEMS driven by digitally-modulated communication signals. A measurement system is proposed in order to characterize IMD generation in RF MEMS capacitors excited by two RF tones as well as by digitally-modulated signals (QPSK).
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