Abstract
Presents the results of the DLTS study of irradiation-induced defects in n-GaAs irradiated by 6.7 MeV protons at T=300 K. It has been found that the irradiation produces the EL2 defect showing the persistent photoquenching (PPQ) effect. With increasing irradiation dose Phi p>or=1*1011 cm-2 the concentration of irradiation-induced defects grows and their interaction becomes stronger. This changes the electrical properties of the EL2 defect: the thermal activation energy and the charge carrier cross section change. The experimental data permit the EL2 to be identified as the isolated antisite defect AsGa.
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