Abstract
The aim of the research was the studying of the topological insulators Bi2-xSbxTe3-ySey thin films with the different thickness and chemical composition. The obtained time dependences of terahertz radiation have indicated that the generation of THz waves was more efficient in the island film having a total thickness of about tens nanometers with the composition close to the Ren’s curve, where the volume contribution to the conductivity was suppressed. We have demonstrated an amplification of the THz radiation power by applying an external electric field to a topological insulator. This effect can be useful for fabricating photoconductive THz antennas based on topological insulators.
Highlights
A Topological insulators (TIs) is a sequence of quintuple layers (QL), the thickness of each quintuple layer being about 1 nm
We have demonstrated an amplification of the terahertz range (THz) radiation power by applying an external electric field to a topological insulator
The generation of radiation in Bi2−xSbxTe3-ySey compounds (BSTS) was studied in details, the dominant role of the photon drag mechanism was shown, and the third-order rotational symmetry of the THz signal was found
Summary
A TI is a sequence of quintuple layers (QL), the thickness of each quintuple layer being about 1 nm. The obtained time dependences of terahertz radiation have indicated that the generation of THz waves was more efficient in the island film having a total thickness of about tens nanometers with the composition close to the Ren’s curve, where the volume contribution to the conductivity was suppressed.
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