Abstract
Generation of terahertz pulses from the island films of topological insulator Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3-y</sub>Se<sub>y</sub>
Highlights
We perform a study of the THz emission properties of Bi2-xSbxTe3-ySey thick films with thickness of hundreds nm and one island film with total thickness about 40 nm grown by MOCVD method on sapphire substrate
The electric field of THz waves generated in the direction opposite to pumping was measured at different times after the arrival of the pump pulse
We have shown that the intensity of the THz signal from the island film is 25 times greater than that in “thick” topological insulators (TI) samples
Summary
We perform a study of the THz emission properties of Bi2-xSbxTe3-ySey thick films with thickness of hundreds nm and one island film with total thickness about 40 nm grown by MOCVD method on sapphire substrate. Antenna was oriented to register vertical components of the THz field collinear with the polarization of the pump. The electric field of THz waves generated in the direction opposite to pumping was measured at different times after the arrival of the pump pulse.
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