Abstract
The bandstructure for complex wavevector for bulk semiconductors in the [100] and [111] directions has been calculated using a layer method — a technique that utilises empirical pseudopotentials. In addition to the usual Bloch type solutions, information is also obtained about the evanescent solutions. By using all these bulk solutions as a basis for the wavefunction in the superlattice, and by constraining the wavefunction to satisfy the relevant boundary conditions at the superlattice interfaces, the electronic bandstructure of the superlattice has been generated. This paper describes the method, and uses it to examine the electronic bandstructure of GaAs AlAs superlattices in the [100] direction. In particular, the in-plane bandstructure of the superlattice conduction bands has been examined, as has the variation of the energy gap of the superlattice with AlAs mole fraction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.