Generation of soliton operating at 1.5 µm regime using Indium Selenide based saturable absorber

Abstract

We successfully accomplished a soliton pulse in an Erbium-doped fiber laser (EDFL) cavity by integrating an Indium Selenide (In2Se3)-based passive saturable absorber (SA). In2Se3 film was prepared by using a common dry cast method and owns saturable intensity, modulation depth, and non-saturable loss of 1066.57 MW/cm2, 1.1 %, and 72.2 %, respectively. By implementing In2Se3 film into the EDF laser cavity, a generation of soliton with 1.880 MHz, at the threshold pump power of 83.63 mW was achieved. A narrow pulse width of 5.51 ps and remarkable temporal stability, as demonstrated by a signal noise ratio (SNR) of 78.52 dB and peak power of 1.00 kW obtained using In2Se3 as SA operating in a 1.5-μm regime proven its potential in photonic applications.