Generation of positive and negative charges under Fowler–Nordheim injection and breakdown

Abstract

Characteristics shifts and time to breakdown of metal–oxide–semiconductor devices due to the Fowler–Nordheim current were investigated. The characteristics shifts were changed by holes and electrons generated in the gate oxides. Distribution of the holes and electrons shows injections of holes from anode electrodes into the gate oxide and uniform generation of electron traps except for tunneling distance of the Fowler–Nordheim current. Moreover, correlations between magnitude of gate electric fields calculated from the distribution and the time to breakdown show the breakdown occurring without impact ionizations in the gate oxide.