Abstract

Phase holograms offer great potential e.g. for laser beam shaping and imaging applications. However, the generation of these structures typically requires multi-step processes which tend to be time-consuming and expensive, especially if high-quality structures are required. In this work we demonstrate a flexible and inexpensive method which allows for the production of binary phase-only holograms by laser ablation of ITO nanoparticle layers. Since these layers are ablated free of residues, accurately defined phase shifts can be achieved. While arbitrarily shaped structures can be generated, the ITO layer thickness can be adjusted in order to freely tune the phase shift for the desired wavelength. In the diffraction patterns generated by the holograms we observed an excellent zero order suppression.

Highlights

  • Due to their high optical transmission phase diffractive optical elements offer great potential e.g. for laser beam shaping applications

  • In this work we propose a simple and flexible method to generate well-defined binary phase holograms by direct laser ablation of transparent ITO nanoparticle layers from transparent glass substrates

  • The desired layer thickness d leading to a phase shift of φ can be calculated by φ = 2πd (n532nm − 1)/λ with the real part of the particle layer effective refractive index for a wavelength of 532 nm given by n532 nm = 1.492 [17]

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Summary

Introduction

Due to their high optical transmission phase diffractive optical elements offer great potential e.g. for laser beam shaping applications. The most common methods are lithographic processes that in most cases include a subsequent etching step [1, 2] and mechanical material structuring by diamond turning [3]. Replication of diffractive elements by hot-embossing or injection-molding in the case of polymers [4, 5] and compression molding for glass materials [6] has been demonstrated. An appealing approach that includes laser ablation of an UVintransparent sputtered SiOx layer from a SiO2 substrate and subsequent oxidization of the residual layer parts to SiO2 at high temperatures was reported [7, 8]. The direct ablation of bulk glass and polymer substrates was demonstrated

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