Abstract
The GHz-frequency microwave oscillations of voltage in a no-base p+-p-n+ silicon diode driven by reverse current with a pulse duration of ∼300 ns and a current density of several kA/cm2 were experimentally observed for the first time. The mechanism of initiation of these oscillations was theoretically considered. The frequency and the modulation percentage of the microwave oscillations were shown to depend on the current density and dopant-concentration gradient in the p-n-junction plane.
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