Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

Abstract

Implanting the buried oxide of silicon-on-insulator technologies can create electron traps throughout the buried oxide that can compensate the buildup of radiation-induced positive charge. These can be used as an effective method for total-dose hardening buried oxides in SOI devices. In this work, we show that implanting buried oxides can also create thermally activated metastable electron traps near the top Si/SiO 2 border. These metastable electron traps can produce significant bias instabilities in the back-gate transistor characteristics and lead to threshold voltage instabilities in fully-depleted devices.