Generation of Ince–Gaussian beams in highly efficient, nanosecond Cr, Nd:YAG microchip lasers

Abstract

Direct generation of higher-order Ince–Gaussian (IG) beams from laser-diode end-pumped Cr, Nd:YAG self-Q-switched microchip lasers was achieved with high efficiency and high repetition rate. An average output power of over 2 W was obtained at an absorbed pump power of 8.2 W; a corresponding optical-to-optical efficiency of 25% was achieved. Various IG modes with nanosecond pulse width and peak power of over 2 kW were obtained in laser-diode pumped Cr, Nd:YAG microchip lasers under different pump power levels by applying a tilted, large area pump beam. The effect of the inversion population distribution induced by the tilted pump beam and nonlinear absorption of Cr4+-ions for different pump power levels on the oscillation of higher-order IG modes in Cr, Nd:YAG microchip lasers is addressed. The higher-order IG mode oscillation has a great influence on the laser performance of Cr, Nd:YAG microchip lasers.