Abstract
We present and discuss the generation of high-peak pulse beam of hydrogen plasma, which has a high potential for use in semiconductor crystal growth. The scheme proposed in the present work is the pulse injection of hydrogen gas to a compact electron cyclotron resonance plasma gun, in order to achieve a relatively high concentration of hydrogen in a small microwave discharge cavity and the increase of plasma intensity for a short time after stopping the hydrogen injection. By this scheme, plasma pulses having 170-ms width and peak intensity 50–600 times higher than the case of continuous hydrogen flow can be generated. The total ion current obtained was higher as well, since plasma intensity was found to increase superlinearly with hydrogen supply. The application of the high-peak hydrogen plasma pulses to crystal growth was briefly examined in short-pulsed chemical beam epitaxy of AlAs.
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