Abstract
The thermal conditions created in an aluminum metallization layer on a silicon wafer by a rectangular current pulse are analyzed at pulse heights of up to 6 × 1010 A/m2 and pulse durations from 50 to 103 μs. The thermoelastic stress developing in silicon substrates as a result of unsteady-state heating of the metallization layer is calculated. The theoretically predicted formation of linear defects near thermal shock sources in silicon is confirmed by experimental data.
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