Abstract
Generation of the Si dangling bond defect in amorphousSiO2 (E′ centre) induced by tunable pulsed UV laser radiation was investigated by in situ opticalabsorption measurements. The defect generation efficiency peaks when the photon energy equals∼5.1 eV, it depends quadratically on laser intensity and is correlated with the native linearabsorption due to Ge impurities. We propose a model in which the generation ofE′ is assisted by a two-step absorption process occurring on Ge impurity sites.
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