Abstract
The generation mechanism of dislocations and their clusters during the two-dimensional growth of multicrystalline Si was studied by in situ observation of a growing interface and subsequent analysis of dislocations. Dislocations were frequently generated at impingement points of the growth of crystal grains where Si melt was enclosed by crystal grains when it solidified. The generation of dislocations was accompanied by the formation of a new twin boundary. On the other hand, no dislocations were observed at impingement points of the growth of crystal grains where Si melt was open when it solidified. We herein present a scheme for dislocation generation with the formation of a new twin boundary on the basis of the results of our former study on dislocation generation in the unidirectional growth of multicrystalline Si ingots.
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