Abstract

Minority-carrier generation lifetime of MOS capacitors was improved by performing a fast neutron enhanced intrinsic gettering (NEIG) technique on the Czochralski (CZ) silicon wafers on which the devices were fabricated. With NEIG, the minority-carrier generation lifetime was possibly to be elevated high to 822μs.It was shown that the NEIG method can be used to substitute for the conventional three-step H–L–H (H: high temperature annealing for a long time, L: low temperature annealing for a long time) intrinsic gettering method to have equivalent or better electrical properties but saving the processing time.

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