Abstract
Abstract Seeded recrystalization of thick (up to 50 μm) polycrystalline silicon on SiO2 using the zone melting technique provides films which contain no grain bounderies and exhibit large areas without subgrain boundaries (mm2v. The results, especially the comparison of the two irradiation systems used (laser and strip heater), indicate the dominating role of the thermal gradient at the crystallization front for the origin and arrangement of defects. The electrical properties measured at bipolar transistors indicate the usefulness of the material for device applications.
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