Abstract
A generalized expression of small signal admittances of solid state diodes with arbitrary field dependent carrier injection from the cathode is presented, which is characterized by an injection-controlling complex frequency ωf=[∂Ji/∂E]E=E0/ε and the dielectric relaxation frequency. The field dependent injection has considerable effects: positive mobility diodes have negative conductance similar to the monotron (cf., the metal-insulator-metal transit time effect diode), and the negative conductance of the negative mobility diode is made nearly independent of the transit angle (cf., the Schottky barrier contact Gunn diode). The Read diode is the case that ωf is pure imaginary and the emitter controlled negative conductance triode is the case that ωf is zero.
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