Generalized lucky-drift model for impact ionization in semiconductors with disorder

Abstract

An extension of an original lucky-drift model to the case of disordered semiconductors isproposed, motivated by experimental observations of an avalanche phenomenon inamorphous semiconductors. The generalization encompasses two scattering mechanisms: aninelastic one due to optical phonons and an elastic one due to a disorder potential.An obtained analytical solution is verified by a kinetic Monte Carlo simulation.Eventually, experimental data on a field dependence of the impact ionization coefficientin amorphous selenium are interpreted using reasonable material parameters.