Abstract
For electron transport in parallel-plane semiconducting structures, a model isdeveloped that unifies ballistic and diffusive transport and thus generalizesthe Drude model. The unified model is valid for arbitrary magnitude of themean free path and arbitrary shape of the conduction band edge profile.Universal formulas are obtained for the current-voltage characteristic in thenondegenerate case and for the zero-bias conductance in the degenerate case,which describe in a transparent manner the interplay of ballistic and diffusivetransport. The semiclassical approach is adopted, but quantum correctionsallowing for tunnelling are included. Examples are considered, in particularthe case of chains of grains in polycrystalline or microcrystallinesemiconductors with grain size comparable to, or smaller than, the mean freepath. Substantial deviations of the results of the unified model from those ofthe ballistic thermionic-emission model and of the drift-diffusion model arefound. The formulation of the model is one-dimensional, but it is argued thatits results should not differ substantially from those of a fullythree-dimensional treatment.
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