Generalized CVD Diagram of the Si–C–N–H–Не(Ar) System

Abstract

Silicon carbonitride (SiCxNy) films have useful properties and thereby wide potential for practical use. Methods for the preparation of bulk and film SiCxNy-based materials are intensively developing. Here, we consider the preparation of such films by chemical vapor deposition (CVD) using organosilicon compounds as precursors. Additional components of the input gases are NH3 and N2 as reagents and an inert gas (He or Ar). The principles of thermodynamic calculations of the CVD process occurring under quasi-equilibrium conditions are analyzed. A generalized CVD diagram for the Si–C–N–H–He(Ar) system having excessive carbon has been designed in the area of deposition parameters where p = 0.01–10 Torr, T = 600–1400 K, and n(N)/n(Si) = 1–10. This diagram will be useful in experimental studies of the Si–C–N–H–He(Ar) system.