Abstract
A general virtual interface (GenVI) algorithm is derived for in situ spectroscopic ellipsometry (SE) data analysis. This new algorithm can be applied to any material deposition (semiconductor, metal, or dielectric) to determine the topmost layer thickness, complex index of refraction, and surface roughness, completely independent of the previous deposition history. Exact thin film equations are used in the calculation, which allows wider time ranges of data to be incorporated into the analysis, thereby improving the precision and accuracy of the results (compared to derivative-based approaches). The effectiveness of the GenVI algorithm is demonstrated by the analysis of in situ SE data acquired during the deposition of a DLC film on a metal substrate, under particularly challenging (but real-world) experimental conditions.
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