General Method for Predicting Interface Bonding at Various Oxide–Metal Interfaces

Abstract

Interface termination bonding between metal oxide and metals is discussed from the viewpoint of thermodynamics. The method of interface termination prediction proposed by the authors for Al2O3–metal and ZnO–metal interfaces is extended to a general interface between metal-oxide and metals. The extension of the prediction method to the interface between metal oxides and elemental semiconductors is also discussed. Information on interface bonding was extracted by carefully examining the experimental results and first-principles calculations in the references. The extracted information on interface bonding from references is compared with the results obtained via the proposed prediction method. It is demonstrated that interface termination bonding can be predicted by extending the method to oxide–metal interfaces in general, when there is no interface reaction such as the reduction of oxide, oxidation of metal, or mixed oxide formation. The method uses only basic quantities of pure elements and the formation enthalpy of oxides. Therefore, it can be applied to most of the metals (including elemental semiconductors) in the periodic table and metal oxides with one stable valence. The method is implemented as a software, “InterChemBond”, and can be used free of charge.