Abstract
An iterative method for numerical calculation of the steady-state electrical characteristics of transistors, already available in the literature, is improved and generalized. The set of variables which is chosen for formulating the numerical algorithm allows calculation of the steady-state transistor properties under arbitrary bias conditions. Complete freedom is available as regards the doping profile, recombination properties of the basic material, electrical characteristics of the external contacts, etc. The method, which reduces mathematically to two coupled two-point boundary value problems, is demonstrated by calculating the steady-state electrical characteristics of a double-diffused planar transistor structure.
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