Abstract
The growth and growth rates of single-crystal nanowires by vapor phase mechanisms have been studied. A hypothesis has been proposed, which lays down foundation for the nanowire growth. It redefines the basic concepts of droplets from seeds and describes the fundamental basis of the adhesive properties of droplets. A set of droplet characteristics has been defined, a model in the framework of the hypothesis has been developed, and theoretical calculations have been performed. Experiments have also been carried out. Close correspondences between the theoretical and the experimental results lend support for the hypothesis and the model. Additional experimental evidences quantify the validity of the hypothesis. The calculated results resolve conflicts and controversies. They address the roles of catalysts in the growth of single-crystal nanowires. They shed light on the basic differences in the growth of thin and thick nanowires. They elucidate possible relationship between eutectic temperature and activation energy in the vapor-liquid-solid growth. They provide ground rules that govern the relative supplies of constituent vapor species for the growth of compound semiconductor nanowires. They explain how the same alloyed droplet (e.g., Au/Ga) is activated differently under the influence of different nonmetal elements of different nanowires (for example, As of GaAs, P of GaP, and N of GaN). They demonstrate, for example, that the nanowire growth may be achieved by means that creates thermodynamic imbalance and nanopores inside the seeds at temperatures far below the seed’s melting temperature. Alloying in the vapor-solid-liquid mechanism is one such means where growth of even thick nanowires (radius of rD≥50 nm) is possible at temperatures far below the eutectic temperature. The hypothesis, is called the simple, novel, and malleable (SNM) hypothesis. This hypothesis, together with the model, appears to have solved the basic origin of the nanowire growth. It demonstrates that various vapor phase mechanisms are essentially different forms of one and only one mechanism. They differ only to the extent that different techniques are employed in different mechanisms to create molten/semimolten seeds for nanowire growths.
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