Abstract
Transformations of gallium nanofilms have been studied by optical spectroscopy, optical microscopy, and gravimetry at film thicknesses d = 2–74 nm and heat treatment temperatures T = 423–873 K. Kinetic curves of the degree of conversion in the films are adequately represented by a linear, inverse logarithmic, parabolic, or logarithmic rate law. We have measured the contact potential difference across the Ga and Ga2O3 films and the photovoltage in the Ga-Ga2O3 system and constructed the energy band diagram of the Ga-Ga2O3 films. A model has been proposed for the thermal transformation of Ga films which includes oxygen adsorption, carrier redistribution in the Ga-Ga2O3 interfacial field, and gallium(III) oxide formation.
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