Abstract
In this work, a 4H-SiC n-i-p avalanche photodiode (APD) with n-layer formed by N ion implantation is demonstrated, in which recessed-window structure is used as termination for reducing electrical field crowding effect around the device edge. The APD with 20 μm diameter active region exhibits low dark current of ~5 pA, high gain of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> , zero-bias peak quantum efficiency of 53.8 % at 265 nm. Two-dimensional avalanche photocurrent mapping indicates that uniform gain is realized across the device central region while edge-located premature breakdown is effectively suppressed. Since there is no shading effect of top contact metal, close to 100% percent of fill factor is achieved in the multiplication region. The APD can operate in Geiger mode by using a passive quenching circuit. A room temperature single photon detection capability is obtained at 280 nm, when the dark count rate is ~ 28.8 Hz/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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