Abstract
We have investigated High Pressure Oxidation (HPO) of Ge for improving Ge/GeO2 interface in terms of GeO desorption control. C-V characteristics in HPO-GeO2 MIS capacitors revealed the dramatic improvement with a very small hysteresis and frequency dispersion. Furthermore, the dielectric constant enhancement in GeO2 grown by HPO was observed. A sub-bandgap photo absorption was observed in GeO2 film grown by Atmospheric Pressure Oxidation (APO), while a sharp absorption edge at ~6 eV, corresponding to the bandgap of GeO2, was seen in the film by HPO. Based on the thermodynamic consideration, the effectiveness of HPO and low temperature oxygen annealing (LOA) in terms of the suppression of GeO desorption is discussed.
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