Abstract
Due to the shortening of channel length in accordance with Moore’s law, short channel effects degrade transistor performance. This chapter explains the emerging nanosheet fin field effect transistor (FinFET) design and operation through technology computer-aided design (TCAD) tool-based design and simulation. A 10 nm node Ge-channel nanosheet FinFET is designed and simulated by incorporating quantum transport models in both DC and AC environments. Corresponding short channel effect (SCE) parameters are obtained and compared with Si-channel nanosheet FinFETs. Further, device feasibility for low-power and high-frequency applications is studied.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
