Abstract
An overwritable recording medium conformed to the ISO format (CCS) has been developed on the basis of the phase change type recording material using the Ge–Te–Sb ternary alloy. This material achieved the bit error rate (BER) of less than 10-5 and phase margin of more than 40 nsec, which are sufficient for practical use as a digital data recording medium. The overwriting tests made clear the relationship between the digital and analog recording characteristics: erase ratio of more than 25 dB is required to realize the desired BER and the phase margin. Overwritability is achieved over the wide range of linear velocity from 1.4 m/s to 22.0 m/s by selecting appropriate composition areas of the ternary alloy. The crystallization and amorphization mechanisms are discussed in detail which have great effects both on the favorable alloy composition area according to the linear velocity and on the optimum bias power for digital data recording.
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